GaSe1-xSx crystals for teraherz frequency range

Victor V. Atuchin, Yury M. Andreev, Sergei Yu Sarkisov, A. N. Morozov, Chih-Wei Luo, S. A. Ku

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

GaSe1-xSx single crystals has been grown by Bridgman-Stockbarger technique. Structural quality has been evaluated with TEM observation. Terahertz time-domain spectroscopy has been applied for measurements of the frequency-dependent optical constant of doped GaSe crystals as a function of s-content.

Original languageEnglish
Title of host publication2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009
Pages96-99
Number of pages4
DOIs
StatePublished - 1 Jul 2009
Event2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009 - Novosibirsk, Russian Federation
Duration: 1 Jul 20096 Jul 2009

Publication series

NameInternational Workshop and Tutorials on Electron Devices and Materials, EDM - Proceedings
ISSN (Print)1815-3712

Conference

Conference2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009
CountryRussian Federation
CityNovosibirsk
Period1/07/096/07/09

Keywords

  • Doping
  • Gallium selenide
  • Optical properties

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