GaSb-based mid infrared photonic crystal surface emitting lasers

Chien Hung Pan, Chien Hung Lin, Ting Yuan Chang, Tien-chang Lu, Chien Ping Lee

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We demonstrated for the first time above room temperature (RT) GaSb-based mid-infrared photonic crystal surface emitting lasers (PCSELs). The lasers, under optical pumping, emitted at λ lasing ∼2.3μm, had a temperature insensitive line width of 0.3nm, and a threshold power density (P th ) ∼0.3KW/cm 2 at RT. Type-I InGaAsSb quantum wells were used as the active region, and the photonic crystal, a square lattice, was fabricated on the surface to provide optical feedback for laser operation and light coupling for surface emission. The PCSELs were operated at temperatures up to 350K with a small wavelength shift rate of 0.21 nm/K. The PCSELs with different air hole depth were studied. The effect of the etched depth on the laser performance was also investigated using numerical simulation based on the coupled-wave theory. Both the laser wavelength and the threshold power decrease as the depth of the PC becomes larger. The calculated results agree well with the experimental findings.

Original languageEnglish
Pages (from-to)11741-11747
Number of pages7
JournalOptics Express
Volume23
Issue number9
DOIs
StatePublished - 4 May 2015

Fingerprint Dive into the research topics of 'GaSb-based mid infrared photonic crystal surface emitting lasers'. Together they form a unique fingerprint.

Cite this