The use of gas source molecular beam epitaxy (GSMBE) as a production method to produce 77 GHz Gunn diode structures is reported. The process is shown to be a reliable and reproducible tool for the regrowth of low n-type intentionally doped epitaxial InP films. Low defect density and highly uniform layers are routinely grown. The average output power and oscillation frequency of over 5000 fabricated Gunn diodes are centered around 80 mW and 77 Ghz, respectively.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 May 2000|