Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications

J. Franklin*, Hao-Chung Kuo, J. Liu, R. Vizcarra, Y. C. Pao, K. Y. Cheng, G. Pickrell

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The use of gas source molecular beam epitaxy (GSMBE) as a production method to produce 77 GHz Gunn diode structures is reported. The process is shown to be a reliable and reproducible tool for the regrowth of low n-type intentionally doped epitaxial InP films. Low defect density and highly uniform layers are routinely grown. The average output power and oscillation frequency of over 5000 fabricated Gunn diodes are centered around 80 mW and 77 Ghz, respectively.

Original languageEnglish
Pages (from-to)1645-1649
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
StatePublished - 1 May 2000

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