Gas sensing mechanism in Pentacene-based OTFTs

Hsiao-Wen Zan*, Yun Chia Liang, Wuu Wei Tsai, Yuh-Shyong Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The ammonia gas sensing behaviors of pentacene-based organic thin-film transistors were characterized by analyzing parameters such as the threshold voltage, the field-effect mobility and the subthreshold swing. It was firstly found that the bias-induced carriers strongly enhanced the gas sensing. Bias-stress model successfully explained the experimental results. The ammonia-induced threshold voltage shift was probable due to the generation of nitrogen- or hydrogen-related defect states in the pentacene film.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages544-546
Number of pages3
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

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