Gas sensing ability on polycrystalline-silicon nanowire

Yen Ren Lo, Huang-Ming Chen, Yuh-Shyong Yang, Ming Pei Lu

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Trace of protic gases can alter the conductivity of the polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic gases have no effect on the electrical parameters. The proposed mechanism is due to the surface grain boundary of poly-Si NW. The direct evidence is obtained from the comparison between single- and poly-Si NW. The electrical parameters are varied according to the relative humidity levels. Nevertheless, the water molecules can be removed by vacuum indicating that it is physical absorption on the surface. As a result, the poly-Si NW FET has potential to be a reusable device for protic gas sensor.

Original languageEnglish
Pages (from-to)Q3104-Q3107
Number of pages4
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number7
DOIs
StatePublished - 13 Apr 2018

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