Gas phase doping at room temperature

Y. Sasaki, B. Mizuno, S. Akama, R. Higaki, K. Tsutsui, S. Ohomi, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper shows new technology of gas phase doping to realize lowest energy around room temperature thermal potential. Shallow junction formation around 1.5-2 nm is anticipated by gas phase doping.

Original languageEnglish
Title of host publicationExtended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages39-40
Number of pages2
ISBN (Electronic)4891140283, 9784891140281
DOIs
StatePublished - 2002
Event3rd International Workshop on Junction Technology, IWJT 2002 - Tokyo, Japan
Duration: 2 Dec 20023 Dec 2002

Publication series

NameExtended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

Conference

Conference3rd International Workshop on Junction Technology, IWJT 2002
CountryJapan
CityTokyo
Period2/12/023/12/02

Fingerprint Dive into the research topics of 'Gas phase doping at room temperature'. Together they form a unique fingerprint.

Cite this