Gap-type a-Si TFTs for front light sensing application

Ya-Hsiang Tai*, Lu Sheng Chou, Hao Lin Chiu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


The photo effect of gap-gate type hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied to be employed as light sensors owing to its outstanding photosensitivity. It can be operated in on region to provide a higher current level as the sensing signal. However, the gap-gate a-Si:H TFT suffers from some problems such as the photo-current degradation resulted from illuminations and the disturbance of the backlight source when it is used as the sensor in display panel. A new method is proposed to overcome the above issues, which gives a feasible way for this kind of TFT to be used in TFT LCD panel. In this paper, the operation of the sensing method is fully described.

Original languageEnglish
Article number6066249
Pages (from-to)679-683
Number of pages5
JournalIEEE/OSA Journal of Display Technology
Issue number12
StatePublished - 18 Nov 2011


  • Amorphous gap-gate thin-film transistor (TFT)
  • light sensor

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