Gap-type a-Si TFTs for front light sensing application

Ya-Hsiang Tai; Lu Sheng Chou; Hao Lin Chiu

doi:10.1109/JDT.2011.2164054

Gap-type a-Si TFTs for front light sensing application

Ya-Hsiang Tai^*, Lu Sheng Chou, Hao Lin Chiu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The photo effect of gap-gate type hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied to be employed as light sensors owing to its outstanding photosensitivity. It can be operated in on region to provide a higher current level as the sensing signal. However, the gap-gate a-Si:H TFT suffers from some problems such as the photo-current degradation resulted from illuminations and the disturbance of the backlight source when it is used as the sensor in display panel. A new method is proposed to overcome the above issues, which gives a feasible way for this kind of TFT to be used in TFT LCD panel. In this paper, the operation of the sensing method is fully described.

Original language	English
Article number	6066249
Pages (from-to)	679-683
Number of pages	5
Journal	IEEE/OSA Journal of Display Technology
Volume	7
Issue number	12
DOIs	https://doi.org/10.1109/JDT.2011.2164054
State	Published - 18 Nov 2011

Keywords

Amorphous gap-gate thin-film transistor (TFT)
light sensor

Access to Document

10.1109/JDT.2011.2164054

Fingerprint Dive into the research topics of 'Gap-type a-Si TFTs for front light sensing application'. Together they form a unique fingerprint.

Cite this

@article{ab083441a1d64f9aade52221fc4aa351,

title = "Gap-type a-Si TFTs for front light sensing application",

abstract = "The photo effect of gap-gate type hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied to be employed as light sensors owing to its outstanding photosensitivity. It can be operated in on region to provide a higher current level as the sensing signal. However, the gap-gate a-Si:H TFT suffers from some problems such as the photo-current degradation resulted from illuminations and the disturbance of the backlight source when it is used as the sensor in display panel. A new method is proposed to overcome the above issues, which gives a feasible way for this kind of TFT to be used in TFT LCD panel. In this paper, the operation of the sensing method is fully described.",

keywords = "Amorphous gap-gate thin-film transistor (TFT), light sensor",

author = "Ya-Hsiang Tai and Chou, {Lu Sheng} and Chiu, {Hao Lin}",

year = "2011",

month = nov,

day = "18",

doi = "10.1109/JDT.2011.2164054",

language = "English",

volume = "7",

pages = "679--683",

journal = "IEEE/OSA Journal of Display Technology",

issn = "1551-319X",

publisher = "IEEE Computer Society",

number = "12",

}

TY - JOUR

T1 - Gap-type a-Si TFTs for front light sensing application

AU - Tai, Ya-Hsiang

AU - Chou, Lu Sheng

AU - Chiu, Hao Lin

PY - 2011/11/18

Y1 - 2011/11/18

N2 - The photo effect of gap-gate type hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied to be employed as light sensors owing to its outstanding photosensitivity. It can be operated in on region to provide a higher current level as the sensing signal. However, the gap-gate a-Si:H TFT suffers from some problems such as the photo-current degradation resulted from illuminations and the disturbance of the backlight source when it is used as the sensor in display panel. A new method is proposed to overcome the above issues, which gives a feasible way for this kind of TFT to be used in TFT LCD panel. In this paper, the operation of the sensing method is fully described.

AB - The photo effect of gap-gate type hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied to be employed as light sensors owing to its outstanding photosensitivity. It can be operated in on region to provide a higher current level as the sensing signal. However, the gap-gate a-Si:H TFT suffers from some problems such as the photo-current degradation resulted from illuminations and the disturbance of the backlight source when it is used as the sensor in display panel. A new method is proposed to overcome the above issues, which gives a feasible way for this kind of TFT to be used in TFT LCD panel. In this paper, the operation of the sensing method is fully described.

KW - Amorphous gap-gate thin-film transistor (TFT)

KW - light sensor

UR - http://www.scopus.com/inward/record.url?scp=81155132379&partnerID=8YFLogxK

U2 - 10.1109/JDT.2011.2164054

DO - 10.1109/JDT.2011.2164054

M3 - Article

AN - SCOPUS:81155132379

VL - 7

SP - 679

EP - 683

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

SN - 1551-319X

IS - 12

M1 - 6066249

ER -

Gap-type a-Si TFTs for front light sensing application

Abstract

Keywords

Access to Document

Other files and links

Cite this