GaN transistors on Si for switching and high-frequency applications

Tetsuzo Ueda*, Masahiro Ishida, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

74 Scopus citations

Abstract

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low onstate resistances. Note that the GITs on Si are free from current collapse up to 600V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203W at 2.5GHz and 10.7W at 26.5GHz are achieved by the fabricated GaN transistors. These devices for switching and highfrequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

Original languageEnglish
Article number100214
JournalJapanese Journal of Applied Physics
Volume53
Issue number10
DOIs
StatePublished - 1 Oct 2014

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