GaN transistors for power switching and high frequency applications

Naohiro Tsunami*, Yasuhiro Uemoto, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We review our state-of-the-art GaN-based device technologies for power switching at low frequencies and high frequency operation aiming at future millimeter-wave communication systems. These two applications are emerging in addition to the widely investigated power amplifiers at microwave frequencies for cellular base stations. As for the power switching GaN devices, we present a novel device structure called Gate Injection Transistors (GIT), which enables normally-off operation with high drain current. Here we also present the world highest breakdown voltage of 10400V in AlGaN/GaN HFETs. In the last part of this paper, we present GaN-based MIS-HFETs which exhibits as high fnax as 203GHz. The successful integration of low-loss microstrip lines with via-holes onto sapphire enables compact 3-stage K-band amplifier MMIC of which a small-signal gain is as high as 22dB at 26GHz with a 3dB bandwidth of 25-29GHz. The presented devices are promising for the two emerging future applications demonstrating high enough potential of GaN-based transistors.

Original languageEnglish
Title of host publication2008 IEEE CSIC Symposium
Subtitle of host publicationGaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008
DOIs
StatePublished - 29 Dec 2008
Event2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008 - Monterey, CA, United States
Duration: 12 Oct 200815 Oct 2008

Publication series

Name2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008

Conference

Conference2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008
CountryUnited States
CityMonterey, CA
Period12/10/0815/10/08

Keywords

  • AlGaN/GaN
  • Breakdown voltage
  • Gate injection transistor
  • Heterojunction FET
  • MIS-HFET
  • Microstrip line
  • On-state resistance

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    Tsunami, N., Uemoto, Y., Sakai, H., Ueda, T., Tanaka, T., & Ueda, D. (2008). GaN transistors for power switching and high frequency applications. In 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008 [4674511] (2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008). https://doi.org/10.1109/CSICS.2008.56