GaN thickness effect on directional light enhancement from GaN-based film-transferred photonic crystal light-emitting diodes

Chun Feng Lai*, Chia Hsin Chao, Hao-Chung Kuo, Peichen Yu, His Hsuan Yen, Wen Yung Yeh

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Directional light enhancement behavior including collimated far-field patterns sensitively depending on both photonic crystal (PhC) lattice constant and GaN thickness from GaN film-transferred light-emitting diodes (FTLEDs) with a triangular PhC lattice has been experimentally studied. Farfield pattern measurement in the ⌈-M and ⌈-K directions of GaN PhC FTLEDs with various lattice constants and GaN thicknesses revealed different far-field profiles as detemined on the basis of guided mode extraction of Bragg's diffraction. Additionally, three-dimensional (3D) far-field measurement revealing the PhC diffraction patterns was also demonstrated. We also used the 3D finite-different time-domain method to confirm the experimental results.

Original languageEnglish
Article number04DG09
JournalJapanese Journal of Applied Physics
Volume49
Issue number4 PART 2
DOIs
StatePublished - 1 Apr 2010

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