GaN Schottky barrier photodetectors with multi-MgN/GaN buffer

K. H. Lee, P. C. Chang, S. J. Chang, Y. C. Wang, Cheng-Huang Kuo, S. L. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

GaN Schottky barrier photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a multi-MgN/GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN PDs by using the multi-MgN/GaN buffer layer. With a 2 V reverse bias, it was found that the reverse leakage currents measured from PDs with single LT GaN buffer layer and that with multi-MgN/GaN buffer layer were 4.57×10-6 and 1.44×10-12 A, respectively. It was also found that we could use the multi-MgN/GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
StatePublished - 1 Dec 2008
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 8 Dec 200810 Dec 2008

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period8/12/0810/12/08

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