GaN schottky barrier photodetectors

S. J. Chang, S. M. Wang, P. C. Chang, Cheng-Huang Kuo, S. J. Young, T. P. Chen, S. L. Wu, B. R. Huang

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

Original languageEnglish
Article number5482027
Pages (from-to)1609-1614
Number of pages6
JournalIEEE Sensors Journal
Volume10
Issue number10
DOIs
StatePublished - 13 Aug 2010

Keywords

  • Nanorod template
  • noise
  • photodetector
  • ultraviolet

Fingerprint Dive into the research topics of 'GaN schottky barrier photodetectors'. Together they form a unique fingerprint.

  • Cite this

    Chang, S. J., Wang, S. M., Chang, P. C., Kuo, C-H., Young, S. J., Chen, T. P., Wu, S. L., & Huang, B. R. (2010). GaN schottky barrier photodetectors. IEEE Sensors Journal, 10(10), 1609-1614. [5482027]. https://doi.org/10.1109/JSEN.2010.2045889