Gan MIS-HEMTs with nitrogen passivation for power device applications

Shih Chien Liu*, Bo Yuan Chen, Yueh Chin Lin, Ting En Hsieh, Huan Chung Wang, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

37 Scopus citations

Abstract

A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result.

Original languageEnglish
Article number6884799
Pages (from-to)1001-1003
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number10
DOIs
StatePublished - 1 Oct 2014

Keywords

  • Algan/gan
  • Dynamic on resistance
  • Passivation
  • Reliability

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    Liu, S. C., Chen, B. Y., Lin, Y. C., Hsieh, T. E., Wang, H. C., & Chang, E. Y. (2014). Gan MIS-HEMTs with nitrogen passivation for power device applications. IEEE Electron Device Letters, 35(10), 1001-1003. [6884799]. https://doi.org/10.1109/LED.2014.2345130