Gan MIS-HEMTs with nitrogen passivation for power device applications

Shih Chien Liu; Bo Yuan Chen; Yueh Chin Lin; Ting En Hsieh; Huan Chung Wang; Edward Yi Chang

doi:10.1109/LED.2014.2345130

Gan MIS-HEMTs with nitrogen passivation for power device applications

Shih Chien Liu^*, Bo Yuan Chen, Yueh Chin Lin, Ting En Hsieh, Huan Chung Wang, Edward Yi Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result.

Original language	English
Article number	6884799
Pages (from-to)	1001-1003
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	10
DOIs	https://doi.org/10.1109/LED.2014.2345130
State	Published - 1 Oct 2014

Keywords

Algan/gan
Dynamic on resistance
Passivation
Reliability

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title = "Gan MIS-HEMTs with nitrogen passivation for power device applications",

abstract = "A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result.",

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AU - Chen, Bo Yuan

AU - Lin, Yueh Chin

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AU - Wang, Huan Chung

AU - Chang, Edward Yi

PY - 2014/10/1

Y1 - 2014/10/1

N2 - A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result.

AB - A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result.

KW - Algan/gan

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KW - Reliability

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Gan MIS-HEMTs with nitrogen passivation for power device applications

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Keywords

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