Abstract
A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result.
Original language | English |
---|---|
Article number | 6884799 |
Pages (from-to) | 1001-1003 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 35 |
Issue number | 10 |
DOIs | |
State | Published - 1 Oct 2014 |
Keywords
- Algan/gan
- Dynamic on resistance
- Passivation
- Reliability