GaN MIS-HEMT with low dynamic ON-resistance using SiON passivation

S. C. Liu, C. K. Huang, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

An effective SiON passivation with high density of positive fixed charges for GaN MIS-HEMTs is demonstrated. The positive fixed charges at the SiON/AlGaN interface effectively reduce the surface potential and expand the quantum well below the Fermi level, thus improving the device performance. The GaN MIS-HEMT with SiON demonstrated a high maximum drain-source current density (I DS,max ) of >1 A/mm, a breakdown voltage of 750 V at a drain leakage current of 1 μA/mm, and a well transfer characteristics. The dynamic ON-resistance only increased slightly under a high quiescent bias of 100 V.

Original languageEnglish
Title of host publicationWide Bandgap Semiconductor Materials and Devices 17
EditorsJ. M. Zavada, S. Jang, J. K. Hite, V. Chakrapani, T. J. Anderson
PublisherElectrochemical Society Inc.
Pages19-21
Number of pages3
Edition5
ISBN (Electronic)9781607685395
DOIs
StatePublished - 1 Jan 2016
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting - San Diego, United States
Duration: 29 May 20162 Jun 2016

Publication series

NameECS Transactions
Number5
Volume72
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting
CountryUnited States
CitySan Diego
Period29/05/162/06/16

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