GaN metal-semiconductor-metal photodetectors prepared on nanorod template

S. J. Chang; S. M. Wang; P. C. Chang; Cheng-Huang Kuo; S. J. Young; T. P. Chen

doi:10.1109/LPT.2010.2043354

GaN metal-semiconductor-metal photodetectors prepared on nanorod template

S. J. Chang, S. M. Wang, P. C. Chang, Cheng-Huang Kuo, S. J. Young, T. P. Chen

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The authors report the fabrication of GaN-based metalsemiconductormetal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.

Original language	English
Article number	14
Pages (from-to)	625-627
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	9
DOIs	https://doi.org/10.1109/LPT.2010.2043354
State	Published - 16 Apr 2010

Keywords

Nanorod template
Photodetector (PD)
Ultraviolet (UV)

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AU - Chang, S. J.

AU - Wang, S. M.

AU - Chang, P. C.

AU - Kuo, Cheng-Huang

AU - Young, S. J.

AU - Chen, T. P.

PY - 2010/4/16

Y1 - 2010/4/16

N2 - The authors report the fabrication of GaN-based metalsemiconductormetal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.

AB - The authors report the fabrication of GaN-based metalsemiconductormetal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.

KW - Nanorod template

KW - Photodetector (PD)

KW - Ultraviolet (UV)

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GaN metal-semiconductor-metal photodetectors prepared on nanorod template

Abstract

Keywords

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