GaN metal-semiconductor-metal photodetectors prepared on nanorod template

S. J. Chang, S. M. Wang, P. C. Chang, Cheng-Huang Kuo, S. J. Young, T. P. Chen

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The authors report the fabrication of GaN-based metalsemiconductormetal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.

Original languageEnglish
Article number14
Pages (from-to)625-627
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number9
DOIs
StatePublished - 16 Apr 2010

Keywords

  • Nanorod template
  • Photodetector (PD)
  • Ultraviolet (UV)

Fingerprint Dive into the research topics of 'GaN metal-semiconductor-metal photodetectors prepared on nanorod template'. Together they form a unique fingerprint.

Cite this