GaN HEMTs power module package design and performance evaluation

Chung Hsiang Ho, Po Chien Chou, Stone Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

This paper described the electronic performance of power module packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate. Twelve GaN HEMTs chips are mounted on AlN substrate. Each device is wire-bonded in parallel connection to increase the power rating. Both DC and pulsed current-voltage (ID-VDS) characteristics are measured with different connection and sizes of devices, at various power densities, pulse lengths, and duty factors. The packaged GaN HEMTs exhibit the pulsed drain current, 0.43 A/mm. The performance of packaged multichip GaN HEMTs power module is studied. The GaN HEMTs power module exhibit a drain current of 23.04 A, which indicates that connecting GaN HEMTs devices in parallel can effectively increase the drain current.

Original languageEnglish
Title of host publication2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013
Pages96-98
Number of pages3
DOIs
StatePublished - 1 Aug 2013
Event2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013 - Kitakyushu, Japan
Duration: 22 Apr 201325 Apr 2013

Publication series

NameProceedings of the International Conference on Power Electronics and Drive Systems

Conference

Conference2013 IEEE 10th International Conference on Power Electronics and Drive Systems, PEDS 2013
CountryJapan
CityKitakyushu
Period22/04/1325/04/13

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