GaN HEMTs power module package design and performance evaluation

Chung Hsiang Ho, Po Chien Chou, Stone Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper described the electronic performance of power module packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate. Sixteen GaN chips are mounted on one AlN substrate. There are three AlN substrate in one module. Each device is wire-bonded in parallel connection to increase the power rating. Both DC and pulsed current-voltage (ID-VDS) characteristics are measured for different connection and sizes of devices, at various of power densities, pulse lengths, and duty factors. We found some conditions that makes the parallel connection difference down to zero. According that, The GaN has maxima drain current=5.98A(98.8%).

Original languageEnglish
Title of host publication2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages297-299
Number of pages3
ISBN (Print)9781467351348
DOIs
StatePublished - 1 Jan 2013
Event2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013 - Kanazawa, Japan
Duration: 26 May 201330 May 2013

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
CountryJapan
CityKanazawa
Period26/05/1330/05/13

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