GaN epitaxial layers prepared on nano-patterned Si(001) substrate

C. C. Huang, S. J. Chang*, Cheng-Huang Kuo, C. H. Ko, Clement H. Wann, Y. C. Cheng, W. J. Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We report the growth of GaN epitaxial layer on Si(001) substrate with nano-patterns prepared by dry etching facility used in integrated circuit (IC) industry. It was found that the GaN epitaxial layer prepared on nano-patterned Si(001) substrate exhibits both cubic and hexagonal phases. It was also found that threading dislocation observed from GaN prepared on nano-patterned Si(001) substrate was significantly smaller than that prepared on conventional unpatterned Si(111) substrate. Furthermore, it was found that we can reduce the tensile stress in GaN epitaxial layer by about 78% using the nano-patterned Si(001) substrate.

Original languageEnglish
Pages (from-to)1248-1251
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number2
DOIs
StatePublished - 1 Feb 2011

Keywords

  • GaN
  • MOCVD
  • Nano-pattern
  • Si(001)

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    Huang, C. C., Chang, S. J., Kuo, C-H., Ko, C. H., Wann, C. H., Cheng, Y. C., & Lin, W. J. (2011). GaN epitaxial layers prepared on nano-patterned Si(001) substrate. Journal of Nanoscience and Nanotechnology, 11(2), 1248-1251. https://doi.org/10.1166/jnn.2011.3075