GaN epilayer grown on Ga2O3 sacrificial layer for chemical lift-off application

Tsung Yen Tsai*, Ray-Hua Horng, Dong Sing Wuu, Sin Liang Ou, Ming Tsung Hung, Hsu Hung Hsueh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


GaN-on-sapphire structure with a Ga2O3 sacrificial layer was employed for the chemical lift-off process application. The (201) β-oriented Ga2O3 thin film was first deposited on the c-plane sapphire substrate using pulsed laser deposition, followed by the GaN growth via metalorganic vapor phase epitaxy under N2 and H 2 environment in sequence. From the transmission-electron-microscopy observation, the orientation relationship between GaN and β-Ga 2O3 was identified as GaN [11 20] Ga2O 3[010]. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga2O 3 sacrificial layer can be laterally etched out with a hydrofluoric solution.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number11
StatePublished - 11 Oct 2011

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