GaN-based resonant-cavity LEDs featuring a si-diffusion-defined current blocking layer

Pinghui Sophia Yeh*, Meng Chun Yu, Jia Huan Lin, Ching Chin Huang, Yen Chao Liao, Da Wei Lin, Jia Rong Fan, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time. The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-current-density operation and at room temperature. The full widths at half maximum of the electroluminescence spectra were 2 and 1.5 nm for 10- and 5-μ m-diameter RCLEDs, respectively. A stable peak wavelength of 406.6 nm was maintained at various injection currents. The results suggest Si diffusion is an effective means to reduce aperture size. The design and fabrication of the devices are described.

Original languageEnglish
Article number6920027
Pages (from-to)2488-2491
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number24
StatePublished - 15 Dec 2014


  • current blocking layer
  • GaN-based LED
  • resonant-cavity light-emitting diode
  • vertical cavity surface emitting laser

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