GaN-based multi-junction diode with low reverse leakage current using p-type barrier controlling layer

Daisuke Shibata*, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

We present a novel GaN-based diode with low reverse leakage current which ensures the high voltage operation up to 600V. The diode consists of multi-junctions of AlGaN/GaN with a p-GaN overlayer where the anode and cathode are formed on the sidewalls of the channels. The tunneling current which is the origin of the leakage current can be reduced by controlling the potential barrier at the anode sidewall by means of the depletion layer from the p-GaN. The fabricated GaN diode with the p-type barrier controlling layer (BCL) exhibits high forward current of 18A at 1.5V with the breakdown voltages over 600V taking advantages of the reduced leakage current. The fabricated GaN-based diode has smaller R onC of 70 pΩF than 95 pΩF of the commercially available SiC Schottky barrier diode (SBD) indicating that the GaN diode is suitable for power switching. The GaN diode exhibits high conversion efficiency of 98.2 % in the voltage boosting converter at the output voltage of 400V by combining it with a GaN Gate Injection Transistor (GIT). The obtained performance by using the GaN diode is superior to that with a SiC SBD.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - 1 Dec 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 5 Dec 20117 Dec 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period5/12/117/12/11

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  • Cite this

    Shibata, D., Kaibara, K., Murata, T., Yamada, Y., Morita, T., Anda, Y., Ishida, M., Ishida, H., Ueda, T., Tanaka, T., & Ueda, D. (2011). GaN-based multi-junction diode with low reverse leakage current using p-type barrier controlling layer. In 2011 International Electron Devices Meeting, IEDM 2011 [6131616] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131616