GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer

Cheng-Huang Kuo*, Shoou Jinn Chang, Yan Kuin Su, Liang Wen Wu, Jone F. Chen, Jinn Kong Sheu, Ji Ming Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The electrical properties of the Si-doped n+-In0.23Ga0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shown a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.

Original languageEnglish
Pages (from-to)2270-2272
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
DOIs
StatePublished - 1 Apr 2003

Keywords

  • Hall measurement
  • InGaN/GaN
  • LED
  • SPS
  • Tunneling contact

Fingerprint Dive into the research topics of 'GaN-based light emitting diodes with Si-doped In<sub>0.23</sub>Ga<sub>0.77</sub>N/GaN short period superlattice current spreading layer'. Together they form a unique fingerprint.

Cite this