GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography

Ray-Hua Horng; C. C. Yang; J. Y. Wu; S. H. Huang; C. E. Lee; D. S. Wuu

doi:10.1063/1.1940723

GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography

Ray-Hua Horng^*, C. C. Yang, J. Y. Wu, S. H. Huang, C. E. Lee, D. S. Wuu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

135 Scopus citations

Abstract

There is a significant gap between the internal and external efficiencies of conventional GaN light-emitting diodes (LEDs). The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. In this letter, the p -side-up GaNsapphire LEDs with surface textured indium tin oxide (ITO) widow layers were investigated using natural lithography with polystyrene spheres as the etching mask. Under optimum etching conditions, the surface roughness of the ITO film can reach 140 nm while the polystyrene sphere on the textured ITO surface is maintained at about 250-300 nm in diameter. The output power of the ITOGaN LED with and without surface texturing is 10.9, and 8.5 mW at 20 mA, respectively. The LEDs fabricated using the surface-textured ITO produced an output power that exceeded that of the planar-surface LED by about 28% at 20 mA.

Original language	English
Article number	221101
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	22
DOIs	https://doi.org/10.1063/1.1940723
State	Published - 4 Jul 2005

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title = "GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography",

abstract = "There is a significant gap between the internal and external efficiencies of conventional GaN light-emitting diodes (LEDs). The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. In this letter, the p -side-up GaNsapphire LEDs with surface textured indium tin oxide (ITO) widow layers were investigated using natural lithography with polystyrene spheres as the etching mask. Under optimum etching conditions, the surface roughness of the ITO film can reach 140 nm while the polystyrene sphere on the textured ITO surface is maintained at about 250-300 nm in diameter. The output power of the ITOGaN LED with and without surface texturing is 10.9, and 8.5 mW at 20 mA, respectively. The LEDs fabricated using the surface-textured ITO produced an output power that exceeded that of the planar-surface LED by about 28% at 20 mA.",

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AU - Yang, C. C.

AU - Wu, J. Y.

AU - Huang, S. H.

AU - Lee, C. E.

AU - Wuu, D. S.

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AB - There is a significant gap between the internal and external efficiencies of conventional GaN light-emitting diodes (LEDs). The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. In this letter, the p -side-up GaNsapphire LEDs with surface textured indium tin oxide (ITO) widow layers were investigated using natural lithography with polystyrene spheres as the etching mask. Under optimum etching conditions, the surface roughness of the ITO film can reach 140 nm while the polystyrene sphere on the textured ITO surface is maintained at about 250-300 nm in diameter. The output power of the ITOGaN LED with and without surface texturing is 10.9, and 8.5 mW at 20 mA, respectively. The LEDs fabricated using the surface-textured ITO produced an output power that exceeded that of the planar-surface LED by about 28% at 20 mA.

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