GaN-based light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques

Ray-Hua Horng*, Kuan Fu Pan, Chia En Lee, Shao Hua Hung, Wen Yu Lin, Ying Yong Su, Chiao Chih Yang, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

This work reports a p-side-down GaN/mirror/Si light-emitting diode (LED) for vertical current injection fabricated by laser lift-off and wafer bonding techniques. The large area (1 mm×1 mm) GaN/mirror/Si LED with a platinum mirror presents a luminance intensity of 1456 mcd (@350mA) with a forward voltage of 3.96 V. The luminance intensity is two times in magnitude as compared with that of the original GaN/sapphire LED (456mcd, 4.2V @350mA). When the driving current increased to 1 A, the luminance intensity of GaN/mirror/Si LED achieved 2876 mcd, which was 2.8 times in magnitude as compared with that of the original planar GaN/sapphire LED (@1019mcd). These results indicate that the wafer bonding and laser lift-off techniques do not adversely affect the current-voltage characteristics of the LEDs. Furthermore, under high current injection, the GaN/mirror/Si LED presents the better performance due to the Si heat sink.

Original languageEnglish
Pages140-151
Number of pages12
StatePublished - 1 Dec 2005
Event207th ECS Meeting - Quebec, Canada
Duration: 16 May 200520 May 2005

Conference

Conference207th ECS Meeting
CountryCanada
CityQuebec
Period16/05/0520/05/05

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    Horng, R-H., Pan, K. F., Lee, C. E., Hung, S. H., Lin, W. Y., Su, Y. Y., Yang, C. C., & Wuu, D. S. (2005). GaN-based light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques. 140-151. Paper presented at 207th ECS Meeting, Quebec, Canada.