GaN-based LEDs with AZO:Y upper contact

P. H. Chen, W. C. Lai, Li Chi Peng, Cheng-Huang Kuo, Chi Li Yeh, J. K. Sheu, C. J. Tun

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

We report the fabrication of GaN-based lightemitting diodes (LEDs) with ytterbium-doped alumina-zinc-oxide (AZO:Y) upper contact. It was found that AZO and AZO:Y are both highly transparent in the visible region with good thermal stability optically. However, it was found that AZO:Y is much more thermally stable electrically, as compared with AZO. Furthermore, it was found that the output power of GaN LEDs with AZO upper contact decreased significantly from 2.80 to 2.30 mW after 700 °C annealing. With the same annealing condition, it was found that output power decreased only slightly from 2.77 to 2.69 mW for the LEDs with AZO:Y upper contact.

Original languageEnglish
Article number5313952
Pages (from-to)134-139
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number1
DOIs
StatePublished - 1 Jan 2010

Keywords

  • AZO
  • AZO:Y
  • E-beam
  • Light-emitting diode (LED)

Fingerprint Dive into the research topics of 'GaN-based LEDs with AZO:Y upper contact'. Together they form a unique fingerprint.

Cite this