GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, Tien-Chang Lu, Hao-Chung Kuo, S. C. Wang

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

Original languageEnglish
Pages (from-to)724-726
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number5
DOIs
StatePublished - 1 Mar 2006

Keywords

  • GaN
  • Light-emitting diode (LED)
  • Sapphire chemical wet etching

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