GaN-based LEDs grown on HVPE growth high crystalline quality thick GaN template

D. W. Lin*, Chien-Chung Lin, C. H. Chiu, C. Y. Lee, Y. Y. Yang, Z. Y. Li, W. C. Lai, Tien-chang Lu, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In this study, high crystalline quality 30 m thick gallium nitride (GaN) films were grown by hydride vapor phase epitaxy (HVPE) on sapphire substrate, and the thick GaN films were used for developing high performance light-emitting diodes (LEDs). By using high-resolution X-ray diffraction, the full width at half-maximum (FWHM) of the rocking curve shows that this 30 m thick GaN template had high crystalline quality. In addition, the transmission electron microscopy (TEM) images suggest that threading dislocation densities (TDDs) are almost free in multiple quantum wells (MQWs) for LEDs grown on 30 m thick GaN template. Compared with conventional LEDs grown on sapphire, LEDs grown on 30 m thick GaN template exhibit 26 enhancement of light output at 20 mA.

Original languageEnglish
Pages (from-to)H103-H1106
Number of pages4
JournalJournal of the Electrochemical Society
Volume158
Issue number11
DOIs
StatePublished - 18 Oct 2011

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