GaN-based Indiumtin-oxide light emitting diodes with nanostructured silicon upper contacts

Cheng-Huang Kuo*, S. J. Chang, H. Kuan

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

GaN-based indiumtin-oxide (ITO) light emitting diodes (LEDs) with p-GaN, n+-short period superlattice (SPS) and nanostructured silicon contact layers were fabricated. It was found that surface of the ITO LED with nanostructured silicon layer was very rough. It was also found that 20mA forward voltages measured from ITO LEDs with p-GaN, n+-SPS and nanostructured silicon contact layers were 6.01, 3.25 and 3.26V, respectively. Compared with ITO LED with n+-SPS, it was found that output power of ITO LED with nanostructured silicon contact was 17 larger. Furthermore, it was found that ITO LED with nanostructured silicon contact was more reliable.

Original languageEnglish
Pages (from-to)110-112
Number of pages3
JournalIET Optoelectronics
Volume1
Issue number3
DOIs
StatePublished - 11 Sep 2007

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