GaN-based high-Q vertical-cavity light-emitting diodes

Tien-chang Lu*, Tsung Ting Kao, Chih Chiang Kao, Jung Tang Chu, Kang Fan Yeh, Li Fan Lin, Yu Chun Peng, Hung Wen Huang, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


We report a fabrication and demonstration of a GaN-based high-Q vertical-cavity light-emitting diode (VCLED). The GaN VCLED is composed of a 25-pair high-reflectivity (98%) GaN/AlN distributed Bragg reflector (DBR), an eight-pair SiO2/Ta2O5 dielectric DBR (99%), and a three-λ optical thickness InGaN/GaN active region. It shows a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 895 at a driving current of 10 mA and a dominant emission peak wavelength at 465.3 nm. In addition, this VCLED emission linewidth continues to decrease with an increasing injection current, suggesting a possible realization of GaN-based vertical-cavity surface emitting lasers.

Original languageEnglish
Article number4317663
Pages (from-to)884-886
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 1 Oct 2007


  • GaN
  • Light-emitting diode (LED)
  • Vertical cavity
  • Vertical-cavity LED (VCLED)

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