GaN-based green resonant cavity light-emitting diodes

Shih Yung Huang, Ray-Hua Horng*, Wei K. Wang, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

GaN-based resonant cavity light-emitting diodes (RCLEDs) have been successfully fabricated on Si substrate by laser lift-off and wafer bonding techniques. A five-pair TiO2/SiO2 dielectric distributed Bragg reflector (DBR) (with 85% reflectivity) and an Ag layer (with 99% reflectivity) were employed as top and bottom mirrors, respectively, for front emission RCLEDs. The room temperature light output power of the RCLED was 1.5 times that of similar LED structures without a top DBR mirror under 20mA injection current. The cavity modes exhibit a linewidth of 5.5 nm at 525 nm wavelength, which corresponds to a quality factor about 100. Moreover, the full width at half maximum of the emission can be reduced to 35 nm, as a result of the effect of the resonant cavity.

Original languageEnglish
Pages (from-to)3433-3435
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
StatePublished - 25 Apr 2006

Keywords

  • Distributed Bragg reflector
  • GaN
  • Laser lift-off
  • Resonant cavity light-emitting diodes
  • Wafer bonding

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