GaN-Based Enhancement-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using LiNbO3 Ferroelectric Insulator on Gate-Recessed Structure

Ching Ting Lee, Chang Lin Yang, Chun Yen Tseng, Jhe Hao Chang, Ray-Hua Horng

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

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Engineering & Materials Science