Gamma-ray induced deep electron traps in GaInP

Wei Jer Sung*, Tong Yuan Liu, Su Lin Yang, Kai-Feng Huang, Tseung-Yuen Tseng, Fong In Chou, Yuan Yaw Wei, Yu Rue Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Deep electron traps created by gamma-ray irradiation of Au/GalnP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Three distinct deep electron traps, G1, G2 and G3, were observed in the irradiated GalnP samples. According to the analysis of trap properties in various samples, trap G1 is verified as a bulk defect located at 0.13 eV below the conduction band, while trap G2 and G3 are interface states originated from the junctions of Au/Te-doped GalnP contacts.

Original languageEnglish
Pages (from-to)5306-5307
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number9 A
StatePublished - 1 Sep 2001


  • Deep level
  • Defect
  • DLTS
  • GalnP
  • Gamma-ray
  • Irradiation
  • Trap

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