Deep electron traps created by gamma-ray irradiation of Au/GalnP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Three distinct deep electron traps, G1, G2 and G3, were observed in the irradiated GalnP samples. According to the analysis of trap properties in various samples, trap G1 is verified as a bulk defect located at 0.13 eV below the conduction band, while trap G2 and G3 are interface states originated from the junctions of Au/Te-doped GalnP contacts.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||9 A|
|State||Published - 1 Sep 2001|
- Deep level