Gallium nitride (gan) high-electron-mobility transistors with thick copper metallization featuring a power density of 8.2 w/mm for ka-band applications

Y. C. Lin, S. H. Chen, P. H. Lee, K. H. Lai, T. J. Huang, Edward Yi Chang, Heng Tung Hsu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 m adopted, the device exhibited a high output power density of 8.2 W/mm and a power-added efficiency (PAE) of 26% at 38 GHz. Such superior performance is mainly attributed to the substantial reduction of the source and drain resistance of the device. In addition to improvement in the Radio Frequency (RF) performance, the successful integration of the thick copper metallization in the device technology further reduces the manufacturing cost, making it extremely promising for future fifth-generation mobile communication system applications at millimeter-wave frequencies.

Original languageEnglish
Article number222
JournalMicromachines
Volume11
Issue number2
DOIs
StatePublished - Feb 2020

Keywords

  • Copper metallization
  • High-electron-mobility transistors
  • Millimeter wave

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