Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

Shyr Long Jeng, Chih Chiang Wu*, Wei-Hua Chieng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This study examined the output electrical characteristics - current-voltage (I-V) output, threshold voltage, and parasitic capacitance - of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs) containing different components of identical specifications yielded varied turn-off impedance; hence, the FET quality was inconsistent. Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equivalent-circuit model for circuit simulations. Moreover, high power output requires multiple parallel power transistors, and sorting the difference between similar electrical characteristics is critical in a power system. An isolated gate driver detection method is proposed for sorting the uniformity from the option of the turn-off characteristic. In addition, an equivalent-circuit model for GaN FETs is established on the basis of the measured electrical characteristics and verified experimentally.

Original languageEnglish
Article number478375
JournalJournal of Nanomaterials
Volume2015
DOIs
StatePublished - 1 Jan 2015

Fingerprint Dive into the research topics of 'Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting'. Together they form a unique fingerprint.

Cite this