GaInP/GaAs HBT sub-harmonic gilbert mixers using stacked-LO and leveled-LO topologies

Tzung Han Wu*, Sheng Che Tseng, Chin-Chun Meng, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-μm GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation.

Original languageEnglish
Pages (from-to)880-888
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume55
Issue number5
DOIs
StatePublished - 1 May 2007

Keywords

  • DC offset
  • GaInP/GaAs HBT
  • Gilbert mixer
  • Self-mixing
  • Sub-harmonic mixer
  • Two local oscillators (2LO)-to-RF isolation

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