GaInP/GaAs HBT broadband inductorless receiver

Tzung Han Wu, Chin-Chun Meng*, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz, The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF frontend is less than 8 dB within the bandwidth.

Original languageEnglish
Pages (from-to)247-250
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume50
Issue number1
DOIs
StatePublished - 1 Jan 2008

Keywords

  • GaInP/GaAs HBT
  • Gilbert mixer
  • Micromixer
  • Wideband amplifier

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