GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

D. K. Sengupta*, W. Fang, J. I. Malin, J. Li, T. Horton, A. P. Curtis, K. C. Hsieh, S. L. Chuang, H. D. Chen, M. Feng, G. E. Stillman, L. Li, H. C. Liu, K. M.S.V. Bandara, S. D. Gunapala, W. I. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.

Original languageEnglish
Pages (from-to)78-80
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 7 Jul 1997

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