GaAs/AIGaAs Power Heterobipolar Transistor Fabricated on Silicon Substrate

Daisuke Ueda, W. S. Lee, T. M.A.D. Costa, J. S. Harris

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A GaAs/AIGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2-8 compared with that on bulk GaAs. Owing to the newly developed monolithically grown ballast resistor over an emitter region, the experimentally fabricated device has shown the highest collector current of over 2-5 A for a device with an active device area of 014 mm2.

Original languageEnglish
Pages (from-to)1268-1269
Number of pages2
JournalElectronics Letters
Volume25
Issue number19
DOIs
StatePublished - 17 Aug 1989

Keywords

  • Bipolar devices
  • Power semiconductor devices
  • Semiconductor devices and materials
  • Transistors

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