In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.
|Number of pages||4|
|State||Published - 1 Dec 1999|
|Event||1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong|
Duration: 26 Jun 1999 → 26 Jun 1999
|Conference||1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)|
|City||Shatin, Hong Kong|
|Period||26/06/99 → 26/06/99|