GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications

Yeong Lin Lai; Edward Yi Chang; C. Y. Chang; Don Gey Liu; Man Long Her; Miin Shyue Shiau; Shui Yuan Yang; K. C. Chuang

doi:10.1109/HKEDM.1999.836427

GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications

Yeong Lin Lai^*, Edward Yi Chang, C. Y. Chang, Don Gey Liu, Man Long Her, Miin Shyue Shiau, Shui Yuan Yang, K. C. Chuang

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.

Original language	English
Pages	144-147
Number of pages	4
DOIs	https://doi.org/10.1109/HKEDM.1999.836427
State	Published - 1 Dec 1999
Event	1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong Duration: 26 Jun 1999 → 26 Jun 1999

Conference

Conference	1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
City	Shatin, Hong Kong
Period	26/06/99 → 26/06/99

Access to Document

10.1109/HKEDM.1999.836427

Link to publication in Scopus

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title = "GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications",

abstract = "In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.",

author = "Lai, {Yeong Lin} and Chang, {Edward Yi} and Chang, {C. Y.} and Liu, {Don Gey} and Her, {Man Long} and Shiau, {Miin Shyue} and Yang, {Shui Yuan} and Chuang, {K. C.}",

year = "1999",

month = dec,

day = "1",

doi = "10.1109/HKEDM.1999.836427",

language = "English",

pages = "144--147",

note = "null ; Conference date: 26-06-1999 Through 26-06-1999",

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GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications. / Lai, Yeong Lin; Chang, Edward Yi; Chang, C. Y.; Liu, Don Gey; Her, Man Long; Shiau, Miin Shyue; Yang, Shui Yuan; Chuang, K. C.

1999. 144-147 Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .

Research output: Contribution to conference › Paper › peer-review

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T1 - GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications

AU - Lai, Yeong Lin

AU - Chang, Edward Yi

AU - Chang, C. Y.

AU - Liu, Don Gey

AU - Her, Man Long

AU - Shiau, Miin Shyue

AU - Yang, Shui Yuan

AU - Chuang, K. C.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.

AB - In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.

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