GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications

Yeong Lin Lai*, Edward Yi Chang, C. Y. Chang, Don Gey Liu, Man Long Her, Miin Shyue Shiau, Shui Yuan Yang, K. C. Chuang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.

Original languageEnglish
Pages144-147
Number of pages4
DOIs
StatePublished - 1 Dec 1999
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: 26 Jun 199926 Jun 1999

Conference

Conference1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period26/06/9926/06/99

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