A GaAs power FET with zero-temperature-coefficient has been developed for the first time. We found drain current (Id) and threshold voltage (Vth) shifts are strongly dependent on the mechanical stress inside a chip which generates piezoelectric charges in the channel. Such stress is originally caused by the difference of the thermal expansion coefficients of GaAs and base-metal. The sign of piezoelectric charge distribution can be controlled by the tensor product of the stress and crystal orientation. Using this inherent feature of GaAs material, we have developed a new temperature compensation technique of GaAs power FET just by choosing a proper gate orientation.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|State||Published - 1 Dec 1997|
|Event||1997 International Electron Devices Meeting - Washington, DC, USA|
Duration: 7 Dec 1997 → 10 Dec 1997