TY - JOUR
T1 - GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nm
AU - Lin, Sheng-Di
AU - Lee, C. P.
PY - 2002/12/1
Y1 - 2002/12/1
N2 - In this paper, we report on the fabrication a GaAs metal-semiconductor-metal photodetector with both low dark current and high responsivity at 850 nm. By using the Schottky contacts modified by a thin, n+-doped layer on the surface of the devices, the lowest dark current density of about 4.5 × 10-7 cm-2 was achieved. Besides, in the same devices, the responsivity resulting from a newly designed resonant-cavity-enhanced structure with a superlattice distributed Bragg reflector was about 0.34 A W-1 at 850 nm. The equivalent external quantum efficiency of the devices with equal finger spacing and finger width was about 48%. Our design is relatively easy and reproducible for both the sample growth and the device process.
AB - In this paper, we report on the fabrication a GaAs metal-semiconductor-metal photodetector with both low dark current and high responsivity at 850 nm. By using the Schottky contacts modified by a thin, n+-doped layer on the surface of the devices, the lowest dark current density of about 4.5 × 10-7 cm-2 was achieved. Besides, in the same devices, the responsivity resulting from a newly designed resonant-cavity-enhanced structure with a superlattice distributed Bragg reflector was about 0.34 A W-1 at 850 nm. The equivalent external quantum efficiency of the devices with equal finger spacing and finger width was about 48%. Our design is relatively easy and reproducible for both the sample growth and the device process.
UR - http://www.scopus.com/inward/record.url?scp=0036903767&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/17/12/309
DO - 10.1088/0268-1242/17/12/309
M3 - Article
AN - SCOPUS:0036903767
VL - 17
SP - 1261
EP - 1266
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 12
ER -