GaAs MESFET RF I-V curve through unique determination of small-signal circuit parameters from measured S parameters

Chin-Chun Meng*, G. H. Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A method to uniquely determine each small signal circuit element from measured S parameters is used to obtain the rf I-V curve for uniform-doped MESFETs. No dc measurement is needed in this method. The resulting rf I-V curve differs from the static dc I-V curve and is useful to predict rf performance.

Original languageEnglish
Pages (from-to)426-427
Number of pages2
JournalMicrowave and Optical Technology Letters
Volume34
Issue number6
DOIs
StatePublished - 20 Sep 2002

Keywords

  • GaAs
  • High-frequency I-V
  • MESFET
  • S parameters

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