GaAs MESFET MODEL FOR CIRCUIT SIMULATION.

P. George*, K. Hui, P. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

A semi-heuristic circuit model is presented for GaAs MESFETs. The novel features of the model include single continuous expressions for drain current and interelectrode capacitance valid for both subthreshold and above-threshold regions of device operation.

Original languageEnglish
Pages (from-to)409-412
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
StatePublished - 1 Jan 1987

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