GaAs MESFET model for circuit simulation

Peter George, Ping K. Ko, Chen-Ming Hu

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

This paper describes a generalized circuit model for GaAs MESFETs. The novel features of the model include continuous descriptions for the intrinsic FET, Schottky diode and inter-electrode capacitance, valid both above and below device threshold. The model also displays good agreement with HEMT characteristics.

Original languageEnglish
Pages (from-to)379-397
Number of pages19
JournalInternational Journal of Electronics
Volume66
Issue number3
DOIs
StatePublished - 1 Jan 1989

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