Gaas lateral bipolar transistor with field-separated carriers

Daisuke Ueda; H. Takagi; G. Kano; I. Teramoto

doi:10.1049/el:19870635

Gaas lateral bipolar transistor with field-separated carriers

Daisuke Ueda, H. Takagi, G. Kano, I. Teramoto

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A new type of GaAs lateral bipolar transistor has been developed by introducing an n-i-p-i-n structure where the electric field is applied perpendicular to the direction of carrier injection in order for the carriers to be separated. The diffusion length is increased owing to the increase of lifetime due to the spatial separation of injected carriers, resulting in the increase of current gain.

Original language	English
Pages (from-to)	899-900
Number of pages	2
Journal	Electronics Letters
Volume	23
Issue number	17
DOIs	https://doi.org/10.1049/el:19870635
State	Published - 1 Jan 1987

Keywords

Bipolar devices
Semiconductor devices and materials
Transistors

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10.1049/el:19870635

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abstract = "A new type of GaAs lateral bipolar transistor has been developed by introducing an n-i-p-i-n structure where the electric field is applied perpendicular to the direction of carrier injection in order for the carriers to be separated. The diffusion length is increased owing to the increase of lifetime due to the spatial separation of injected carriers, resulting in the increase of current gain.",

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AB - A new type of GaAs lateral bipolar transistor has been developed by introducing an n-i-p-i-n structure where the electric field is applied perpendicular to the direction of carrier injection in order for the carriers to be separated. The diffusion length is increased owing to the increase of lifetime due to the spatial separation of injected carriers, resulting in the increase of current gain.

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