Gaas lateral bipolar transistor with field-separated carriers

Daisuke Ueda, H. Takagi, G. Kano, I. Teramoto

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A new type of GaAs lateral bipolar transistor has been developed by introducing an n-i-p-i-n structure where the electric field is applied perpendicular to the direction of carrier injection in order for the carriers to be separated. The diffusion length is increased owing to the increase of lifetime due to the spatial separation of injected carriers, resulting in the increase of current gain.

Original languageEnglish
Pages (from-to)899-900
Number of pages2
JournalElectronics Letters
Volume23
Issue number17
DOIs
StatePublished - 1 Jan 1987

Keywords

  • Bipolar devices
  • Semiconductor devices and materials
  • Transistors

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