A high-speed GaAs monolithic laser driver integrated circuit (IC) for application to high-data-rate optical communication systems is demonstrated. The IC is designed to operate from dc to 2 Gb/s with an input level compatible with silicon emitter-coupled logic at low data rates. The experimental chip was fabricated using the conventional full ion-implantation process. Experimental ICs exhibited current driving capability of 50 mA peak to peak with a rise/fall time of 100 ps at 2 Gb/s data rate.
|Number of pages||4|
|State||Published - 1 Dec 1985|