GAAS LASER-DRIVER OPERATING UP TO 2 GBIT/S DATA RATE.

Daisuke Ueda*, Akio Shimano, Tatsuo Otsuki, Hiromitsu Kaneko, Mitsuo Tamura, Hiromitsu Takagi, Gota Kano, Iwao Teramoto

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

A high-speed GaAs monolithic laser driver integrated circuit (IC) for application to high-data-rate optical communication systems is demonstrated. The IC is designed to operate from dc to 2 Gb/s with an input level compatible with silicon emitter-coupled logic at low data rates. The experimental chip was fabricated using the conventional full ion-implantation process. Experimental ICs exhibited current driving capability of 50 mA peak to peak with a rise/fall time of 100 ps at 2 Gb/s data rate.

Original languageEnglish
Pages103-106
Number of pages4
StatePublished - 1 Dec 1985

Fingerprint Dive into the research topics of 'GAAS LASER-DRIVER OPERATING UP TO 2 GBIT/S DATA RATE.'. Together they form a unique fingerprint.

Cite this