GAAS LASER-DRIVER OPERATING UP TO 2 GBIT/S DATA RATE.

Daisuke Ueda; Akio Shimano; Tatsuo Otsuki; Hiromitsu Kaneko; Mitsuo Tamura; Hiromitsu Takagi; Gota Kano; Iwao Teramoto

GAAS LASER-DRIVER OPERATING UP TO 2 GBIT/S DATA RATE.

Daisuke Ueda^*, Akio Shimano, Tatsuo Otsuki, Hiromitsu Kaneko, Mitsuo Tamura, Hiromitsu Takagi, Gota Kano, Iwao Teramoto

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

A high-speed GaAs monolithic laser driver integrated circuit (IC) for application to high-data-rate optical communication systems is demonstrated. The IC is designed to operate from dc to 2 Gb/s with an input level compatible with silicon emitter-coupled logic at low data rates. The experimental chip was fabricated using the conventional full ion-implantation process. Experimental ICs exhibited current driving capability of 50 mA peak to peak with a rise/fall time of 100 ps at 2 Gb/s data rate.

Original language	English
Pages	103-106
Number of pages	4
State	Published - 1 Dec 1985

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title = "GAAS LASER-DRIVER OPERATING UP TO 2 GBIT/S DATA RATE.",

abstract = "A high-speed GaAs monolithic laser driver integrated circuit (IC) for application to high-data-rate optical communication systems is demonstrated. The IC is designed to operate from dc to 2 Gb/s with an input level compatible with silicon emitter-coupled logic at low data rates. The experimental chip was fabricated using the conventional full ion-implantation process. Experimental ICs exhibited current driving capability of 50 mA peak to peak with a rise/fall time of 100 ps at 2 Gb/s data rate.",

author = "Daisuke Ueda and Akio Shimano and Tatsuo Otsuki and Hiromitsu Kaneko and Mitsuo Tamura and Hiromitsu Takagi and Gota Kano and Iwao Teramoto",

year = "1985",

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day = "1",

language = "English",

pages = "103--106",

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TY - CONF

T1 - GAAS LASER-DRIVER OPERATING UP TO 2 GBIT/S DATA RATE.

AU - Ueda, Daisuke

AU - Shimano, Akio

AU - Otsuki, Tatsuo

AU - Kaneko, Hiromitsu

AU - Tamura, Mitsuo

AU - Takagi, Hiromitsu

AU - Kano, Gota

AU - Teramoto, Iwao

PY - 1985/12/1

Y1 - 1985/12/1

N2 - A high-speed GaAs monolithic laser driver integrated circuit (IC) for application to high-data-rate optical communication systems is demonstrated. The IC is designed to operate from dc to 2 Gb/s with an input level compatible with silicon emitter-coupled logic at low data rates. The experimental chip was fabricated using the conventional full ion-implantation process. Experimental ICs exhibited current driving capability of 50 mA peak to peak with a rise/fall time of 100 ps at 2 Gb/s data rate.

AB - A high-speed GaAs monolithic laser driver integrated circuit (IC) for application to high-data-rate optical communication systems is demonstrated. The IC is designed to operate from dc to 2 Gb/s with an input level compatible with silicon emitter-coupled logic at low data rates. The experimental chip was fabricated using the conventional full ion-implantation process. Experimental ICs exhibited current driving capability of 50 mA peak to peak with a rise/fall time of 100 ps at 2 Gb/s data rate.

UR - http://www.scopus.com/inward/record.url?scp=0022291149&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0022291149

SP - 103

EP - 106

ER -

GAAS LASER-DRIVER OPERATING UP TO 2 GBIT/S DATA RATE.

Abstract

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