GaAs high-power RF single-pole double-throw switch IC for digital mobile communication system

Kazuo Miyatsuji*, Shunsuke Nagata, Noriyuki Yoshikawa, Kazutune Miyanaga, Yoshiro Ohishi, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

The high-power GaAs monolithic RF switch IC reported here handles over 5W (P1dB:37dBm) with insertion loss less than 1.0dB using a circuit to feed forward the signal to the control gate. Positive voltage switching is achieved by integrating large coupling capacitors using high dielectric material, barium strontium titanate (BST), at inputs and outputs. The RF single-pole double-throw (SPDT) switch IC is mounted in a SSO10, where better than 25dB isolation is achieved at a frequency of 1GHz.

Original languageEnglish
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Editors Anon
PublisherPubl by IEEE
Pages34-35
Number of pages2
ISBN (Print)0780318455
DOIs
StatePublished - 1 Jan 1994
EventProceedings of the 1994 IEEE International Solid-State Circuits Conference - San Francisco, CA, USA
Duration: 16 Feb 199418 Feb 1994

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference

Conference

ConferenceProceedings of the 1994 IEEE International Solid-State Circuits Conference
CitySan Francisco, CA, USA
Period16/02/9418/02/94

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