A GaAs BiFET LSI technology has been successfully developed for low power, mixed mode communication circuit applications. The direct placement of the FET on the HBT emitter cap layer simplifies the device epitaxial growth and process integration. High integration levels and functional circuit yield have been achieved. Excellent HBT and FET characteristics have been produced, with the noise figure of the FETs comparable to those of traditional MESFETs, enabling them to perform well in front end receiver applications. Through this technology, several LSI circuits, including 32-bit by 2-bit shift registers and a single-chip DRFM have been successfully demonstrated.
|Number of pages||4|
|State||Published - 1 Dec 1994|
|Event||Proceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA|
Duration: 16 Oct 1994 → 19 Oct 1994
|Conference||Proceedingsof the 1994 IEEE GaAs IC Symposium|
|City||Philadelphia, PA, USA|
|Period||16/10/94 → 19/10/94|