HBT technology has benefitted recently from improved epitaxial growth techniques, particularly for the p+ base. The technology has reached pilot production at various companies; demonstrations of producibility and reliability have been made. Advanced circuit demonstrations include high efficiency (>45%) amplifiers with 1W output at 7-11GHz; digital data multiplexers operating above 20GHz; and broadband feedback amplifiers with 30GHz bandwidth. Prospects are also good for ultralow power microwave circuits and HBT-based optoelectronic ICs.
|Number of pages||3|
|State||Published - 1 Jan 1991|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 27 Aug 1991 → 29 Aug 1991
|Conference||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||27/08/91 → 29/08/91|