GaAlAs/GaAs heterojunction bipolar transistors. Issues and prospects for application

P. M. Asbeck*, Mau-Chung Chang, K. C. Wang, G. J. Sullivan, J. A. Higgins

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

HBT technology has benefitted recently from improved epitaxial growth techniques, particularly for the p+ base. The technology has reached pilot production at various companies; demonstrations of producibility and reliability have been made. Advanced circuit demonstrations include high efficiency (>45%) amplifiers with 1W output at 7-11GHz; digital data multiplexers operating above 20GHz; and broadband feedback amplifiers with 30GHz bandwidth. Prospects are also good for ultralow power microwave circuits and HBT-based optoelectronic ICs.

Original languageEnglish
Pages71-73
Number of pages3
StatePublished - 1 Jan 1991
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 27 Aug 199129 Aug 1991

Conference

Conference23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period27/08/9129/08/91

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    Asbeck, P. M., Chang, M-C., Wang, K. C., Sullivan, G. J., & Higgins, J. A. (1991). GaAlAs/GaAs heterojunction bipolar transistors. Issues and prospects for application. 71-73. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .