GaA1As/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application

P. M. Asbeck, Mau-Chung Chang, J. A. Higgins, N. H. Sheng, G. J. Sullivan, Keh Chung Wang

Research output: Contribution to journalArticlepeer-review

153 Scopus citations

Abstract

Issues important for the manufacturing of GaAlAs/GaAs heterojunction bipolar transistors and their prospects for application in various areas are discussed. Microwave and digital performance status of HBT's is reviewed. Extrapolated values of maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported. Key prospects for further device development are highlighted.

Original languageEnglish
Pages (from-to)2032-2042
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume36
Issue number10
DOIs
StatePublished - 1 Jan 1989

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